bc856w...bc860w 1 dec-11-2001 pnp silicon af transistors for af input stages and driver applications high current gain low collector-emitter saturation voltage low noise between 30 hz and 15 khz complementary types: bc846w, bc847w, bc848w bc849w, bc850w (npn) 1 3 vso05561 2 type marking pin configuration package bc856aw bc856bw bc857aw bc857bw bc857cw bc858aw bc858bw bc858cw BC859AW bc859bw bc859cw bc860bw bc860cw 3as 3bs 3es 3fs 3gs 3js 3ks 3ls 4as 4bs 4cs 4fs 4gs 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 2 = e 2 = e 2 = e 2 = e 2 = e 2 = e 2 = e 2 = e 2 = e 2 = e 2 = e 2 = e 2 = e 3 = c 3 = c 3 = c 3 = c 3 = c 3 = c 3 = c 3 = c 3 = c 3 = c 3 = c 3 = c 3 = c sot323 sot323 sot323 sot323 sot323 sot323 sot323 sot323 sot323 sot323 sot323 sot323 sot323
bc856w...bc860w 2 dec-11-2001 maximum ratings parameter symbol bc856w bc857w bc860w bc858w bc859w unit collector-emitter voltage v ceo 65 45 30 v collector-base voltage v cbo 80 50 30 collector-emitter voltage v ces 80 50 30 emitter-base voltage v ebo 5 5 5 dc collector current i c 100 ma peak collector current i cm 200 ma peak base current i bm 200 peak emitter current 200 i em total power dissipation , t s = 124 c p tot 250 mw junction temperature t j 150 c storage temperature t st g -65 ... 150 thermal resistance junction - soldering point 1) r thjs 105 k/w electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 10 ma, i b = 0 bc856w bc857/860w bc858/859w v (br)ceo 65 45 30 - - - - - - v collector-base breakdown voltage i c = 10 a, i e = 0 bc856w bc857/860w bc858/859w v (br)cbo 80 50 30 - - - - - - 1 for calculation of r thja please refer to application note thermal resistance
bc856w...bc860w 3 dec-11-2001 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 10 a, v be = 0 bc856w bc857/860w bc858/859w v (br)ces 80 50 30 - - - - - - v emitter-base breakdown voltage i e = 1 a, i c = 0 v (br)ebo 5 - - collector cutoff current v cb = 30 v, i e = 0 i cbo - - 15 na collector cutoff current v cb = 30 v, i e = 0 , t a = 150 c i cbo - - 5 a dc current gain 1) i c = 10 a, v ce = 5 v h fe -group a h fe -group b h fe -group c h fe - - - 140 250 480 - - - - dc current gain 1) i c = 2 ma, v ce = 5 v h fe -group a h fe -group b h fe -group c h fe 125 220 420 180 290 520 250 475 800 collector-emitter saturation voltage1) i c = 10 ma, i b = 0.5 ma i c = 100 ma, i b = 5 ma v cesat - - 75 250 300 650 mv base-emitter saturation voltage 1) i c = 10 ma, i b = 0.5 ma i c = 100 ma, i b = 5 ma v besat - - 700 850 - - base-emitter voltage 1) i c = 2 ma, v ce = 5 v i c = 10 ma, v ce = 5 v v be(on) 600 - 650 - 750 820 1) pulse test: t = 300 s, d = 2%
bc856w...bc860w 4 dec-11-2001 electrical characteristics at t a = 25 c, unless otherwise specified. parameter symbol values unit min. typ. max. ac characteristics transition frequency i c = 20 ma, v ce = 5 v, f = 100 mhz f t - 250 - mhz collector-base capacitance v cb = 10 v, f = 1 mhz c cb - 3 5 pf emitter-base capacitance v eb = 0.5 v, f = 1 mhz c eb - 10 15 short-circuit input impedance i c = 2 ma, v ce = 5 v, f = 1 khz h fe -gr. a h fe -gr. b h fe -gr. c h 11e - - - 2.7 4.5 8.7 - - - k open-circuit reverse voltage transf.ratio i c = 2 ma, v ce = 5 v, f = 1 khz h fe -gr. a h fe -gr. b h fe -gr. c h 12e - - - 1.5 2 3 - - - 10 -4 short-circuit forward current transf.ratio i c = 2 ma, v ce = 5 v, f = 1 khz h fe -gr. a h fe -gr. b h fe -gr. c h 21e - - - 200 330 600 - - - - open-circuit output admittance i c = 2 ma, v ce = 5 v, f = 1 khz h fe -gr. a h fe -gr. b h fe -gr. c h 22e - - - 18 30 60 - - - s noise figure i c = 200 a, v ce = 5 v, r s = 2 k , f = 1 khz, f = 200 hz bc856w bc857w bc858w f - - 10 db noise figure i c = 200 a, v ce = 5 v, r s = 2 k , f = 1 khz, f = 200 hz bc859w bc860w f - - 1 1 4 4 equivalent noise voltage i c = 200 a, v ce = 5 v, r s = 2 k , f = 10 ... 50 hz bc860w v n - - 0.11 v
bc856w...bc860w 5 dec-11-2001 collector-base capacitance c cb = f ( v cbo ) emitter-base capacitance c eb = f ( v ebo ) 0 4 10 5 10 10 ehp00376 v cb0 c eb0 v 6 2 eb0 v ebo c 8 10 pf 12 cb0 c -1 0 1 c cbo ( ( ) bc 856...860 ) total power dissipation p tot = f ( t s ) 0 20 40 60 80 100 120 c 150 t s 0 50 100 150 200 mw 300 p tot permissible pulse load p totmax / p totdc = f ( t p ) 10 ehp00377 -6 0 10 5 d = 5 10 1 5 10 2 3 10 10 -5 10 -4 10 -3 10 -2 10 0 s 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 t p = d t t p t tot max tot p dc p p t transition frequency f t = f ( i c ) v ce = 5v 10 10 10 10 ehp00378 f ma mhz -1 0 1 2 5 t 3 10 10 2 1 10 5 5 5 c
bc856w...bc860w 6 dec-11-2001 collector cutoff current i cbo = f ( t a ) v cb = 30v 10 0 50 100 150 ehp00381 t a 5 10 10 na 10 cb0 5 5 5 10 10 4 3 2 1 0 -1 max typ c collector-emitter saturation voltage i c = f ( v cesat ), h fe = 20 10 0 ehp00380 v cesat 10 ma 10 10 2 1 0 -1 5 5 v 0.3 0.5 100 25 -50 0.1 0.2 0.4 c c c c dc current gain h fe = f ( i c ) v ce = 5v 10 10 10 10 ehp00382 h ma -2 -1 12 fe 3 10 10 2 0 10 5 5 10 1 0 10 5 555 100 25 -50 c c c c base-emitter saturation voltage i c = f (v besat ), h fe = 20 0 10 ehp00379 besat v 0.6 v 1.2 -1 10 0 10 1 2 10 5 5 c ma 0.2 0.4 0.8 c 25 c 100 c -50 c
bc856w...bc860w 7 dec-11-2001 h parameter h e = f ( i c ) normalized v ce = 5v 10 10 10 bc 856...860 ehp00383 ma -1 0 1 5 e h 2 10 -1 10 1 10 10 0 5 5 5 h 11e h 12e h 21e h 22e v ce = 5 v c h parameter h e = f ( v ce ) normalized i c = 2ma 0 0102030 bc 856...860 ehp00384 v ce h e v 1.0 0.5 1.5 2.0 = 2 ma h 11 12 h h 22 c noise figure f = f ( v ce ) i c = 0.2ma, r s = 2k , f = 1khz 0 10 10 10 10 bc 856...860 ehp00385 v ce f v 10 5 15 db 20 -1012 5 5 noise figure f = f ( f ) i c = 0.2ma, v ce = 5v, r s = 2k 10 10 10 10 bc 856...860 ehp00386 f khz db -2 -1 1 2 20 10 0 5 15 f 0 10
bc856w...bc860w 8 dec-11-2001 noise figure f = f ( i c ) v ce = 5v, f = 1khz 10 10 10 10 bc 856...860 ehp00388 f ma -3 -2 0 1 20 10 0 5 15 -1 10 = 1 m 100 k 10 k db 500 1 k ?? ? s r ? ? c noise figure f = f ( i c ) v ce = 5v, f = 120hz 10 10 10 10 bc 856...860 ehp00387 f ma -3 -2 0 1 20 10 0 5 15 -1 10 = 1 m 100 k 10 k db 500 1 k ? ?? s r ? ? c noise figure f = f ( i c ) v ce = 5v, f = 10khz 10 10 10 10 bc 856...860 ehp00389 ma -3 -2 0 1 20 10 0 5 15 -1 10 db f c = 1 m r s ? ? 100 k ? 10 k 500 ? ? 1 k
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